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[2020-09-16]   Post Doc Neuromorphic & In-Memory Computing based on Novel Memory Technologies
Jobbeschreibung
The Center Nanoelectronic Technologies (CNT) at Fraunhofer IPMS conducts research on 300 mm wafers for microchip producers, suppliers, equipment manufacturers and R&D partners and offers technology development and services on Ultra Large Scale Integration Level (ULSI) in the area of FEoL and BEoL. Main activities in the field of integrating innovative functionalities into existing CMOS platforms involve research on novel memory concepts and high-frequency components based on ferroelectric, CMOS-compatible materials. Furthermore, the CNT is working on energy-efficient power management systems that combine solid state batteries, harvesters and embedded capacitors. Moreover, neuromorphic systems and components with e.g. spin-based devices are investigated.
Within the group of CMOS integrated RF and AI, we implement neuromorphic & in-memory computing approaches to realize efficient hardware accelerators for embedded AI algorithms. Herefore, we use novel non-volatile memory devices. The fusion of logic and memory elements - typically ferroelectric field-effect transistors (FeFETs) - maximizes energy efficiency and speed. At the same time, integration with upscaled technologies can minimize wafer area and maximize performance. As a Post Doc in the area of analog hardware accelerators you will work interdisciplinary in research projects to develop this mixed-signal ASIC platform for flexible applications of AI. The work is based on a dedicated commitment that novel hardware and novel computational concepts must be co-evolved in a close interaction between nano-electronic device engineering, circuit and microprocessor design, fabrication technology and computing science. Was Sie mitbringen

A PhD in scientific or engineering studies (physics, chemis

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